[HTML][HTML] Job satisfaction among family medicine physicians in Saudi Arabia
…, HI ALassaf, AS Aldayel, YA Alaskar… - Journal of Family …, 2021 - journals.lww.com
Objective: Physicians are subject to chronic stressors, depression, and burnout due to long
working hours, high requirements, and critical decision-making.[1 2 3 4 5] All those reasons …
working hours, high requirements, and critical decision-making.[1 2 3 4 5] All those reasons …
[HTML][HTML] Assessment of knowledge, attitudes and practices of Saudi adults about calorie labeling in central Saudi Arabia
HI Alassaf, YA Alaskar, BF Alqulaysh… - Saudi Medical …, 2020 - ncbi.nlm.nih.gov
Objectives: To assess the knowledge, attitudes, and practices of adults regarding the
implementation of calorie labeling in restaurants in Riyadh, Saudi Arabia. Methods: This was a …
implementation of calorie labeling in restaurants in Riyadh, Saudi Arabia. Methods: This was a …
Towards van der Waals epitaxial growth of GaAs on Si using a graphene buffer layer
Y Alaskar, S Arafin, D Wickramaratne… - Advanced Functional …, 2014 - Wiley Online Library
Van der Waals growth of GaAs on silicon using a two‐dimensional layered material, graphene,
as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is …
as a lattice mismatch/thermal expansion coefficient mismatch relieving buffer layer is …
[HTML][HTML] Effect of Al and Mg doping on reducing gases detection of ZnO nanoparticles
S Jaballah, Y Alaskar, I AlShunaifi, I Ghiloufi, G Neri… - Chemosensors, 2021 - mdpi.com
In this work, the main objective is to enhance the gas sensing capability through investigating
the effect of Al and Mg doping on ZnO based sensors. ZnO, Mg 1% doped ZnO, Al 5% …
the effect of Al and Mg doping on ZnO based sensors. ZnO, Mg 1% doped ZnO, Al 5% …
Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer
Y Alaskar, S Arafin, Q Lin, D Wickramaratne… - Journal of Crystal …, 2015 - Elsevier
A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability
to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as …
to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as …
Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
…, C Zhao, L Al-Maghrabi, Y Alaskar… - Journal of …, 2018 - spiedigitallibrary.org
There have been recent research advances in AlGaN-based self-assembled nanowires (NWs)
as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted …
as building blocks for ultraviolet (UV) optoelectronics grown by plasma-assisted …
[BOOK][B] High Quality Arsenic Based III-V Semiconductor Integration on Si Using van der Waals Layered Material Buffer for Photonic Integration Applications
YA Alaskar - 2016 - search.proquest.com
Integration of arsenide-based III-V compound semiconductors on silicon (Si) has been the
focus of significant research to integrate light sources on silicon, enabling an integrated …
focus of significant research to integrate light sources on silicon, enabling an integrated …
[HTML][HTML] Layer-by-layer hybrid chemical doping for high transmittance uniformity in graphene-polymer flexible transparent conductive nanocomposite
A traditional transparent conducting film (TCF) such as indium tin oxide (ITO) exhibits poor
mechanical flexibility and inconsistent transmittance throughout the UV-VIS-NIR spectrum. …
mechanical flexibility and inconsistent transmittance throughout the UV-VIS-NIR spectrum. …
[HTML][HTML] Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires
The diode junction temperature (T j) of light emitting devices is a key parameter affecting the
efficiency, output power, and reliability. Herein, we present experimental measurements of …
efficiency, output power, and reliability. Herein, we present experimental measurements of …
[HTML][HTML] Investigation of single-mode vertical-cavity surface-emitting lasers with graphene-bubble dielectric DBR
An inter-cavty contact single mode 850 nm VCSEL was fabricated with a graphene assisted
self-assembly curved dielectric bubble Bragg mirror for the first time. Taking the advantage …
self-assembly curved dielectric bubble Bragg mirror for the first time. Taking the advantage …